On June 15, ITRI announced that on the one hand, it cooperated with TSMC, a leading wafer manufacturing company, to develop a world-leading Spin Orbit Torque Magnetoresistive Random Access Memory (SOT-MRAM) array chip, and on the other hand, cooperated with Yang Ming Jiaotong University has developed an emerging magnetic memory technology with an operating temperature of nearly 400 degrees. ITRI said that this emerging magnetic memory technology has published relevant papers at the world's top "Symposiumon VLSI Technology and Circuits" (Symposiumon VLSI Technology and Circuits), the world's top semiconductor field, and is expected to accelerate the industry's advancement into the next generation of memory technology. group. Process scaling is an important trend in advanced semiconductor manufacturing processes. Among them, magnetoresistive random access memory (MRAM) has the potential to be scaled down to below 22 nanometers, with high read and write speeds, low power consumption, and data retention after power failure. characteristics, especially for the emerging field of embedded memory. Zhang Shijie, director of the Institute of Electronics and Optoelectronic Systems of ITRI, said that MRAM has write and read speeds comparable to Static Random Access Memory (SRAM), as well as non-volatile flash memory. A rising star in advanced semiconductor processes, next-generation memory and computing. Zhang Shijie pointed out that under the premise of high writing speed, the smaller the voltage and current used in the memory, the higher the efficiency. 0.4 ns high-speed write, 7 trillion read and write high endurance. Zhang Shijie shared that this is 100 times more than the Interuniversity Microelectronics Centre (imec), the largest semiconductor research institution in Europe, and has more than 10 years of data storage capabilities. In the future, it can be integrated into an advanced process embedded memory for application in AI artificial intelligence, automotive electronics, high-performance computing chips and other fields have excellent prospects. On the other hand, ITRI and Yangming Jiaotong University also jointly published the high-efficiency operation technology of emerging magnetic memory at VLSI this year, optimizing the multi-layer film of Spin-Transfer-Torque MRAM (STT-MRAM) and components, improve the writing speed, shorten the delay, reduce the writing current and increase the number of times of use. The ITRI pointed out that the emerging magnetic memory has stable and high-efficiency data access capabilities in the range of 127 degrees to minus 269 degrees, and the multi-functional magnetic memory with an operating temperature of nearly 400 degrees has been experimentally verified for the first time. It has strong potential in forward-looking applications and industries such as computers and aerospace.